 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V(Min) *Good Linearity of hFE *Complement to Type 2SC3264 APPLICATIONS *Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 -5 A PC 200 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1295 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -2.0 V ICBO Collector Cutoff Current VCB= -230V; IE= 0 -100 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 A hFE DC Current Gain IC= -5A; VCE= -4V 50 140 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 500 pF fT Current-Gain--Bandwidth Product IE= 2A; VCE= -12V 35 MHz Switching times ton Turn-on Time IC= -5A ,RL= 12, IB1= -IB2= -0.5A,VCC= -60V 0.35 s tstg Storage Time 1.5 s tf Fall Time 0.3 s hFE Classifications O 50-100 Y 70-140 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA1295
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |